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GaAs-Nanowire-Array/Graphene Schottky Diodes for Photodetection

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Abstract

A Schottky diode based on GaAs nanowire/graphene heterostructure is fabricated by transferring graphene onto the nanowire array. Under illumination of 532 nm, a responsivity of 1.1 mA/W is achieved at reverse bias of 0.5 V.

© 2017 Optical Society of America

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