Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > ACPC > 2017 > Su4K > Su4K.5

In0.16Ga0.84N Metal-Semiconductor-Metal Visible-light Photodiodes with GaN Interlayers deposited by Pulsed NH3

Wang Hong-xia, Zhang Xiao-han, Wang Hai-long, Li Yong-xian, Li Bin, Yan Huan, Qiu xin-jia, and Jiang Hao

Not Accessible

Your library or personal account may give you access

Abstract

GaN interlayers deposited with pulsed NH3 flow were inserted into the In0.16Ga0.84N active layer to suppress phase separation. The then fabricated metal-semiconductor-metal visible-light photodiode exhibit the significantly decreased dark current and sharpened response cutoff.

© 2017 Optical Society of America

PDF Article
More Like This
Two-terminal Al0.1Ga0.9N/GaN based visible-blind avalanche phototransistors

Ou Yanghui, Wang Hailong, Chen Meng, Wang Hongxia, and Jiang Hao
Su4K.4 Asia Communications and Photonics Conference (ACP) 2017

Formation of InGaN self-assembled quantum dots on GaN by metal-organic chemical vapor deposition with NH3 periodic interruption growth

Seung-Kyu Choi, Jae-Min Jang, Sung-Hak Yi, Jung-A Kim, and Woo-Gwang Jung
WP_143 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2007

A 10-Gbps In0.53Ga0.47As p-i-n Photodiode Receiver on Metamorphic InGaP Buffered GaAs Substrate

Yu-Sheng Liao, Gong-Ru Lin, Hao-Chung Kuo, Kai-Ming Feng, and Milton Feng
CThD1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use