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  • Asia Communications and Photonics Conference (ACPC) 2019
  • OSA Technical Digest (Optica Publishing Group, 2019),
  • paper M4A.248

Ultra-high modulation efficiency micro-ring modulator based on strained SiGe

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Abstract

30-Gbps electro-optical micro-ring modulator based on strained SiGe with high modulation efficiency of 0.74 V•cm is proposed and demonstrated. The p-SiGe epitaxy layer can reduce effective mass of hole and increase vertical junction area.

© 2019 The Author(s)

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