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Solitary vs Gaussian Waves Gating of InGaAs/InP Avalanche Photodiode to Stabilize Dark Count Rate as Excess Voltage Increases

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Abstract

A mathematical model for dark count rate of soliton gated InGaAs/InP SPAD is developed. Results are compared with published experimental counts of Gaussian gating. Simulation results show DCR is not affected by increasing VEX.

© 2018 The Author(s)

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