Abstract

High power ruby and Nd:YAG laser pulses have been successfully used to remove displacement damage in ion-implanted semiconductors. These results as well as those on dissolution of loops and precipitates, dopant profile broadening, and the formation of constitutional supercooling cells have been successfully explained on the basis of a melting model. According to this model, energy contained in the laser beams can be rapidly (<10⁻⁹ sec) transferred to the lattice of a semiconductor, which leads to melting of a thin surface layer.

© 1981 Optical Society of America