Abstract
It has recently been shown1 that the process of laser-induced solid-phase epitaxy (SPE) can be monitored directly by time-resolved optical reflectivity, We have developed this technique to probe the dynamical details of the laser-induced SPE growth process in ion-implanted and deposited amorphous films and have extended these studies to a temperature regime which produces growth rates in excess of 106 times those measured by conventional methods of surface analysis.
© 1981 Optical Society of America
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