Abstract
The technique of laser photochemical doping of semiconductors has recently been developed and applied to the formation of ohmic contacts and p-n junctions.1-3 We report progress in applying this technique to the fabrication of actual devices, namely, Si and GaAs solar cells. While solar cells have been produced with both materials, particularly encouraging results have been obtained by applying the laser photochemical doping technique to GaAs, a material that has proved difficult to process by laser techniques because of its tendency to become damaged. The laser technique has the potential of simplifying the doping process and reducing the cost of solar cell production.
© 1981 Optical Society of America
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