Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Pulsed UV laser photochemical doping of semiconductors

Not Accessible

Your library or personal account may give you access

Abstract

The technique of laser photochemical doping of semiconductors has recently been developed and applied to the formation of ohmic contacts and p-n junctions.1-3 We report progress in applying this technique to the fabrication of actual devices, namely, Si and GaAs solar cells. While solar cells have been produced with both materials, particularly encouraging results have been obtained by applying the laser photochemical doping technique to GaAs, a material that has proved difficult to process by laser techniques because of its tendency to become damaged. The laser technique has the potential of simplifying the doping process and reducing the cost of solar cell production.

© 1981 Optical Society of America

PDF Article
More Like This
Melting phenomenon and laser annealing in semiconductors

J. Narayan, J. Fletcher, C. W. White, R. E. Eby, and W. H. Christie
THC3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1981

Effects at ambipolar assess carrier diffusion in pulsed laser annealing of semiconductors

Dae M. Kim and D. L. Kwong
THC4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1981

Picosecond optical pulse generation at gigahertz rates by direct modulation of a semiconductor laser

John Auyeung and Alan R. Johnston
MJ4 Optical Fiber Communication Conference (OFC) 1981

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved