Abstract
Ultrafast optoelectronic switching under low bias has been reported earlier in CdS0.5Se0.5.1 It has been observed that the lifetime of the photoexcited carriers depends on the frequency and the intensity of the incident radiation.2 It was also observed that the CdS0.5Se0.5 optoelectronic switch can turn off automatically when excited by intense 0.53-µm radiation within a few tens of nanoseconds.3 Now we report the scaling of ultrafast optoelectronic switching in CdS0.5Se0.5 under pulsed bias up to 15 kV and under de bias up to 2 kV.
© 1981 Optical Society of America
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