Abstract
Digital optical receivers operating at wavelengths up to 1.55 μm may currently use either III-V alloy PIN photodiodes with low-noise hybrid-integrated GaAs MESFET preamplifiers1 or Ge APDs.2 To compare the expected performance of such receivers requires the characterization of photocurrent and leakage multiplication (and associated noise) of Ge APDs under various bias conditions and to predict the optimum gain and maximum receiver sensitivity with given preamplifier parameters.
© 1981 Optical Society of America
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