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BROAD-BAND TUNABLE PICOSECOND SEMICONDUCTOR LASERS

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Abstract

We report the largest lasing bandwidth ever observed in GaAs, viz. 7700-8900 Å. This was achieved by photo-exciting a 0.6μ thick crystalline film of GaAs with a near-breakdown power density of 5 GW/cm2 for about 1 ps. The laser cavity is formed by two dielectric mirrors glued onto the faces of the GaAs film with transparent epoxy.1

© 1981 Optical Society of America

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