Abstract

Zinc sulfide is a promising material for electroluminescent devices covering the entire visible range o1 the spectrum.1 In ion-implanted silicon, the pulsed laser annealing technique overcomes common problems associated with conventional thermal annealing2 such as dopant segregation and partial removal of lattice damage. Work on the II-IV semiconductors, however, is at an early stage.

© 1982 Optical Society of America

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