Abstract

We have experimentally investigated variations in ellipsometric parameters ψ, Δ, reflectivity R, surface sheet resistance ρ with radiation time by cw CO2 laser annealing (Fig. 1). The output power of the CO2 laser was 40 W and the beam diameter ~8 mm; 150-keV As+ ions were implanted at a dose of 1 × 1016/cm2 for 6-8 Ω 1 cm (100) P-type Si. The experiments showed that ψ,Δ,R,ρ did not obviously change in the initial stage but sharply decreased to the corresponding values of the crystal silicon after 5-sec radiation.

© 1982 Optical Society of America

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