Abstract

The first results described for photolithography using high-power pulsed excimer lasers will be described. High resolution, fast exposures, and absence of speckle will be experimentally demonstrated. Use of stimulated Raman shifting is proposed for obtaining the most desirable set of spectral lines for any resist, permitting the optimization of the exposure wavelengths for a given photoresist rather than the other way around. Excellent quality images have been obtained in several resists by contact printing with an XeCl laser at 308 nm, a KrF laser at 248 nm, and a KrCl laser at 222 nm. Resolution down to 1000 Ip/mm has been demonstrated.

© 1982 Optical Society of America

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