Abstract

We report the development of GaAs Schottky photodiodes with 3-dB bandwidths of >10 GHz, which is a factor of 2 or more faster than any photodiodes previously reported. We also report a time and frequency domain measurement system essential to the accurate characterization of these devices. The photodiodes, in addition to their wide bandwidth, operate at a very low reverse bias of <10 V and still attain an external quantum efficiency of 25 % at a wavelength of 0.6 µm.

© 1982 Optical Society of America

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