There is great interest in ultrashort optical pulse generation using semiconductor diode lasers,1 since this may provide new capability not only for very high bit-rate optical communication and ultrafast data processing but also as practically useful sources for optical electronics with applications in a variety of fields such as physics, chemistry, life sciences, and engineering. The generation of short optical pulses from diode lasers, however, was studied by several workers more than a decade ago using homojunction GaAs lasers, mostly with double-section structures, operated at liquid nitrogen temperature.

© 1982 Optical Society of America

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