There has been considerable interest in the dynamic characteristics of semiconductor lasers with deliberately introduced saturable absorbers because of their usefulness in ultrashort optical pulse generation, optical switching, and mode locking. The methods of introducing controllable saturable absorption include multisegment lasers,1-3 proton bombardment,4 and inhomogeneous excitation.5 In this report, we describe a simple device structure for picosecond optical pulse generation that utilizes the edge light emitting diode (ELED) type of configuration with a short passive region, as shown in Fig. 1.

© 1982 Optical Society of America

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