Laser modification of semiconductor current gain

Y. C. Kiang; J. Randal Moulic

doi:10.1364/CLEO.1982.WC17

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1982),
paper WC17
•https://doi.org/10.1364/CLEO.1982.WC17

Laser modification of semiconductor current gain

Y. C. Kiang and J. Randal Moulic

Conference on Lasers and Electro-Optics 1982

Phoenix, Arizona United States
14–16 April 1982
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Y. C. Kiang and J. R. Moulic, "Laser modification of semiconductor current gain," in Conference on Lasers and Electro-Optics, R. Abrams and A. Guenther, eds., OSA Technical Digest (Optica Publishing Group, 1982), paper WC17.

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Abstract

The current gain (of β) of a bipolar transistor is inversely proportional to the base width and resistivity of the emitter region.

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