Abstract

We have demonstrated rapid (50-Å/sec) photochemical deposition of oxides and nitrides of silicon from gas-phase donor molecules. Both a pulsed ArF laser (193 nm) and a cw Ar II laser (360 nm) were used. The films were grown on silicon wafers contained in a low-pressure flowing cell with a heated substrate. The incident laser beam angle was varied from parallel to normal with respect to the substrate surface.

© 1982 Optical Society of America

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