Abstract

The laser-enhanced chemical etching of Si and Ta with SF6, Si, SiO2, Ta, and Te films with XeF2 excited by a pulsed CO2 laser arid SiO2 with Cl2 by a cw Ar+ laser has been studied, and the etch rates as a function of the laser wavelength, laser intensity, and gas pressure have been determined.

© 1982 Optical Society of America

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