Abstract

Possible applications for selected area deposition using laser CVD (LCVD) include many in the microelectronics area where deposition dimensions of <1 μm are necessary. To achieve this resolution, the laser heating and deposition must occur before significant thermal spreading of the laser-generated surface temperature profile can take place. We have therefore investigated the LCVD of several metallic films using a CO2 TEA laser with a 0.6-μsec pulse length.

© 1982 Optical Society of America

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