Abstract

We report on the use of laser Raman scattering to probe the stress profile across silicon-on-sapphire (SOS) device structures. Si-on-insulator materials are of great interest for VLSI applications due to the improved isolation between densely packed devices as compared with bulk Si. In such heterogeneous material systems there is an inherent stress due to the differential thermal contraction of the Si and substrate materials upon cooling from the growth temperature.

© 1982 Optical Society of America

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