We find that single-picosecond pulses from an actively mode-locked Nd:YAG laser (TEM00 pulses, 100-psec duration at 1.06 μm, 80 psec at 532 nm, amplitude Jitter ~5%) can produce spontaneous periodic surface ripples1’2 as well as laser annealing in both crystalline and ion-implanted silicon and gallium arsenide. Single- and multiple-pulse annealing thresholds for both amorphous-to-polycrystal and amorphous-to-single-crystal transitions have been accurately measured. The distinct surface ripples appearing in an intermediate range of intensities have also been studied (Fig. 1).
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