We find that single-picosecond pulses from an actively mode-locked Nd:YAG laser (TEM00 pulses, 100-psec duration at 1.06 μm, 80 psec at 532 nm, amplitude Jitter ~5%) can produce spontaneous periodic surface ripples12 as well as laser annealing in both crystalline and ion-implanted silicon and gallium arsenide. Single- and multiple-pulse annealing thresholds for both amorphous-to-polycrystal and amorphous-to-single-crystal transitions have been accurately measured. The distinct surface ripples appearing in an intermediate range of intensities have also been studied (Fig. 1).

© 1982 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription