Use of proton bombardment to reduce the response times of InP photoconductive optoelectronic switches from a few nanoseconds to <100 psec is described. The electron mobility in these bombarded devices can be ≥600 cm2/Vsec, over an order of magnitude larger than that of devices of comparable speed made on other high-resistivity materials. This relatively large mobility implies that with similar structures and bias levels, the InP devices should have over an order of magnitude larger conductivity for a given light level.

© 1982 Optical Society of America

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