Recent work has shown that Fe-doped InP is an efficient photoconductive material with sub-100 psec response.1 Optoelectronic switches fabricated from this material have potential applications in radiation detection, electronic gating, and high- voltage pulse generation. Many applications of the optoelectronic switch are possible because it is a simple photoconductor. Thus the important characteristics of a photoconductor are: (1) a response linear with applied voltage, (2) a response linear with excitation intensity, and (3) a speed of response independent of applied voltage. In this work we have investigated the transient response characteristics of InP:Fe optoelectronic switches to verify these basic properties. We have shown that these devices do in fact behave as photoconductors with the properties identified.

© 1982 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription