Abstract
This paper reports on means for generating micron-scale structures of metal, doped silicon, and polysilicon suitable for implementing a metal- oxide-semiconductor (MOS) technology in ultra-large-scale integrated (ULSI) circuits. The approach involves use of a laser to induce local decomposition of metal-containing compounds during the metal deposition portion of the process, dopant-containing compounds during the doping phase of the process, and silane during the polysilicon formation phase of the process.
© 1983 Optical Society of America
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