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Characterization of high-speed GaAs pholodiodes using a 100-GHz EO sampling system

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Abstract

An electrooptic sampling technique1 has been used to characterize recently developed high-speed GaAs Schottky photodiodes.2 Pulsewidths of 9.5 psec were observed when the photodiodes were excited by 1.5-psec optical pulses (Fig. 1). The impulse response of the sampling system is limited by the autocorrelation of the laser pulses to 2 psec. Furthermore, the system exhibits a linear dynamic range of >80 dB with shot noise limited sensitivity of 68 ja.vVHz and extremely high isolation from sampler feedthrough.

© 1983 Optical Society of America

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