Abstract
Major accomplishments during the last year in the monolithic integration of lasers, transistors, and detectors into more complex optical circuits in the GaAs GaAlAs InP/GalnAs systems will be reviewed. Inherent advantages of monolithic integration in semi-insulating crystals as related to very high-speed (>10-GHz) electronic-optical buffer circuits will be addressed.
© 1983 Optical Society of America
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