Abstract
One way of achieving a real index waveguide in the lateral direction of semiconductor lasers is by growing epitaxial layers over an etched channel by a liquid-phase-epitaxial technique.1-4 However, current utilization of these lasers is in general not very efficient because the current tends to crowd toward the nearby highly conducting channel shoulders and away from the region where the lasing occurs.
© 1983 Optical Society of America
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