Abstract
The damage induced in silicon by multiple picosecond Nd: YAG laser pulses at 1.06 μm has been studied Over the past few years. Observations of damage nucleation and growth and evolution of a spatially coherent damage structure led to an electronic model for the damage mechanism.1-3 We characterize damage in this case as being heterogeneous and occurring well below the homogeneous melt threshold in a material which is macroscoplcally homogeneous. To understand further the damage nucleation and the associated Incubation period, We studied electron and ion emission down to a detection limit of 107 changes and the statistics of the delay period by recording exoemission and laser energy simultaneously. We found an incubation period for which we could not find any laser damage visible, even under a SEM. Initiation of damage was observed coincident with the initiation of exoemission. Furthermore, the length of the incubation period varied inversely with the laser intensity, and the degree of initiated damage depended on the laser rep rate.
© 1983 Optical Society of America
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