Abstract
We report a significant improvement in the performance of InGaAsp (λ = 1.3-1.5-μm) orescent lasers1 grown in an etched V-groove by the addition of InGaAsP (λ =1.1-1.3μm) optical confining layers on both sides of the active layer.2,3 With the large optical cavity, (a) higher optical power, (b) improved optical linearity, (c) higher external quantum efficiency, (d) improved beam quality, and (e) high device yield are obtained.
© 1983 Optical Society of America
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