Abstract
We report the first observations of the dependence of optical absorption on the electric field in GaAs/GaAlAs multiple quantum well structures. For wavelengths near the band gap (~850 nm), large effects are seen with fields of 2 × 104 V/cm due to the shift and broadening of room temperature exciton resonances; consequently this material is very attractive as a light modulator which will require only a few microns of optical path. Because of the small volume of such a modulator, it is especially attractive for high-speed applications.
© 1983 Optical Society of America
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