Metal films on GaAs by multiphoton ionization of column III alkyls

C. C. ABELE; D. KANE; J. G. EDEN

doi:10.1364/CLEO.1985.FK4

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1985),
paper FK4
•https://doi.org/10.1364/CLEO.1985.FK4

Metal films on GaAs by multiphoton ionization of column III alkyls

C. C. ABELE, D. KANE, and J. G. EDEN

Conference on Lasers and Electro-Optics 1985

Baltimore, Maryland United States
21–24 May 1985
ISBN:

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Laser-induced Deposition of Electronic Materials (FK)

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C. C. ABELE, D. KANE, and J. G. EDEN, "Metal films on GaAs by multiphoton ionization of column III alkyls," in Conference on Lasers and Electro-Optics, A. Gara, C. Giuliano, D. Auston, and R. Jacobs, eds., OSA Technical Digest (Optica Publishing Group, 1985), paper FK4.

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Abstract

Geohegan and Eden¹ recently demonstrated the feasibility of depositing thin films of TI, In, and AI by dissociatively photoionizing their respective iodides with an ArF excimer laser or a high-pressure lamp. However, the high temperatures required tο obtain ~1 Torr of the metal-halide vapors limits the utility of this approach.

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