Abstract
High-mobility semiconductors including InP1 and GaAs1,2 offer several advantages for photorefractive image processing: (1) recording sensitivities comparable with those of oxide photorefractors such as LiNbO3, BaTiO3, and Bi12SiO20; (2) near-infrared responsivity, the spectral region of importance for semiconductor lasers, and optical communications; (3) high mobility allowing fast photorefractive responses ranging from nanoseconds to milliseconds; (4) optical and electrical properties that can be tailored by doping.
© 1985 Optical Society of America
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