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New method of measuring relaxation times in semiconductors and metals

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Abstract

Relaxation times of free carriers are traditionally measured with ultrashort laser pulses in a pump–probe arrangement Typically the transmission or polarization rotation or some other physical parameter of the probe beam is measured as a function of time delay between two laser pulses. We propose and demonstrate experimentally another approach where only a single-laser pulse is required.

© 1985 Optical Society of America

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