Abstract
In an effort to better understand the mechanism by which organic polymers are ablatively etched when exposed to high-energy puises of UV laser radiation, we have examined the etch rate dependence of AZ photoresist, poly(methylmethacrylate), and polyimide on laser fluence (mj/cm2/pulse) and laser pulse length. The temporal length of an excimer laser pulse at 308 nm has been doubled by combining two 40-nsec puises of which one had been retarded by means of a 12-m optical delay line.
© 1985 Optical Society of America
PDF ArticleMore Like This
R. SRINIVASAN, BODIL BRAREN, DAVID SEEGER, STEPHEN TROKEL, and RONALD R. KRUEGER
WL2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1985
Y. Horiike, M. Sekine, K. Horioka, T. Arikado, M. Nakase, and H. Okano
WD2 Microphysics of Surfaces, Beams, and Adsorbates (MSBA) 1985
S. J. Mihailov and W. W. Duley
TuHH5 OSA Annual Meeting (FIO) 1990