Abstract

Although Auger processes have for several years been cited to explain the temperature sensitivity of long-wavelength InGaAsP lasers, many previous theoretical calculations of the Auger coefficients have yielded values which are about an order of magnitude larger than those currently measured using, e.g., picosecond pulse techniques.¹ Since several recent publications have noted that much of this discrepancy may be attributed to the use of incorrect k.p wave functions,^2,3 we have recently evaluated the Auger coefficients of p-GaAs, 1.3-μm InGaAsP, and 1.3-μm AlGaInAs in a manner fully consistent with the four-band Kane model.

© 1985 Optical Society of America