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Conferences > CLEO > 1985 > THO > THO1

Gas source molecular beam epitaxy

MORTON B. PANISH and HENRYK TEMKIN

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Abstract

The growth of useful lattice-matched heterostructures of InP/Gaxln1−xln1−xPyAs1−y has been inhibited by the difficulty in maintaining precise control over the arsenic-to-phosphorus flux ratio in conventional molecular beam epitaxy (MBE) as the result of imprecise control of beam intensities from condensed elemental sources. The use of As2 and P2 beams generated from the cracking of Ph3 and AsH3 is an alternative approach that permits precise beam flux control of conventional pressure regulation techniques.

© 1985 Optical Society of America

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