Abstract
Metal-organic chemical vapor deposition (MOCVD) has become an important method in recent years for the growth of high-quality epitaxial layers of various semiconductor materials particularly for use in sophisticated heterostructure and quantum well laser structures. In a typical reactor lower-order metal alkyls, such as trimethylgallium (TMGa) and trimethylaluminum (TMA1), are mixed in the vapor phase with a hydride such as arsine.
© 1985 Optical Society of America
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