Abstract
Results of previous time-resolved luminescence studies of GaAs/AlxGa1−xAs quantum well structures have differed markedly from group to group suggesting that carrier dynamics depend strongly on sample growth. The quantum well material investigated here was grown by metal-organic chemical vapor deposition (MOCVD) in a reactor which routinely produces high-power lasers, whereas previous studies have focused on molecular beam epitaxy grown material. Data were taken at temperatures from 16 to 300 K and over a wide range of excitation densities for 647-nm excitation.
© 1985 Optical Society of America
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