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1.3-μm GaInAsP-InP buried ridge stripe lasers grown by LP-MOCVD on a GaAs substrate

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Abstract

Room-temperature pulsed operation has been obtained for the 1.3-μm buried ridge structure of GaInAsP-InP double heterostructure lasers fabricated on material grown by LP MOCVD using for the first time GaAs Instead of InP substrates.

© 1985 Optical Society of America

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