Abstract

Improved laser performances are often obtained by including quantum wells in semiconductor lasers. Because of the influence of Auger recombination on laser threshold and characteristics it is important to investigate the effect of carrier confinement and band structure reduced symmetry on the Auger effect in quantum well structures (QWSs). We have studied the carrier lifetime as a function of carrier density in a 1-μm thick Ga_0.47 ln_0.53 As and a 1-μm thick high-quality QWS which consist of 50 periods of 100-Å Ga_0.47 ln0.53 As and 100-Å Al_0.48 ln_0.52 As layers.¹

© 1985 Optical Society of America