Abstract

GaAs multiple quantum well (MQW) structures are already exceptional because they show exciton absorption resonances without cooling. MQW structures have also recently shown a phenomenon (also at room temperature) which is qualitatively distinct from that seen with bulk semiconductors at any temperature; for applied electric fields perpendicular to the layers, the exciton resonances are shifted by large amounts without large broadening (Fig. 1).

© 1985 Optical Society of America