Abstract

Because of the quantum-confined Stark effect,¹ electroabsorption in semiconductor multiple quantum wells (MQWs) can be greatly enhanced^2,3 over that in bulk semiconductors.⁴ However, until now, no direct measurement has been made of the electric-field-dependent absorption coefficient. In particular, although values of the absorption coefficient up to an additive constant as a function of voltage are quite easy to obtain, an accurate absolute measurement of the absorption coefficient at its minimum value at a particular wavelength has not yet been reported. This parameter is important, because it controls the absorption component of the device insertion loss, which will become the dominant contributor to insertion loss as other loss mechanisms, such as reflection, radiation, and coupling losses, are reduced.

© 1986 Optical Society of America