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Analysis of the parasitic capacitance of burled heterostructure lasers

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Abstract

The reduction of the parasitic capacitance of the semiconductor lasers is an important factor for high-bit-rate modulation. The buried heterostructure (BH) is widely used because of its low threshold and fundamental transverse mode lasing. The C-V measurement at 13 MHz shows a high parasitic capacitance of ~ 100 pF, giving the 3-dB down bandwidth of some hundreds of megahertz. However, the frequency response measurements of practical BH lasers show a wider gigahertz bandwidth, We analyze the parasitic capacitance using the distributed capacitance model and obtain good coincidence with experimental results from the low to the high frequency regions.

© 1986 Optical Society of America

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