Laser direct-write process for fabrication of VLSI gate-array interconnects

Bruce M. McWilliams

doi:10.1364/CLEO.1986.TUS3

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1986),
paper TUS3
•https://doi.org/10.1364/CLEO.1986.TUS3

Laser direct-write process for fabrication of VLSI gate-array interconnects

Bruce M. McWilliams

Conference on Lasers and Electro-Optics 1986

San Francisco, California United States
9–13 June 1986
ISBN: 0-936659-09-2

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Laser Deposition: 2 (TUS)

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B. M. McWilliams, "Laser direct-write process for fabrication of VLSI gate-array interconnects," in Conference on Lasers and Electro-Optics, G. Bjorklund, E. Hinkley, P. Moulton, and D. Pinnow, eds., OSA Technical Digest (Optica Publishing Group, 1986), paper TUS3.

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Abstract

Maskless automated 5-min interconnection of a 1000-gate CMOS-array die has been accomplished using discretionary laser-induced chemical vapor deposition. This result suggests the feasibility of using this method, laser pantography (LP), for rapid implementation of prototype and limited-volume semicustom VLSI circuits immediately after their design is completed.

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