Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1987),
  • paper THC5

Intracavity laser spectroscopy: analysis of chemical vapor deposition processes

Not Accessible

Your library or personal account may give you access

Abstract

The in situ real-time detection of reactive intermediate species present during chemical vapor deposition (CVD) processes provides the basis for studies of the chemical dynamics of these processes and a useful diagnostic tool not only in optimizing current CVD techniques but also in designing new ones. The radical SiH2 is an important gas-phase precursor in the CVD of silicon films produced by the dissociation of silane and organosilanes. It has been shown that absorption by SiH2 can be detected by intracavity laser spectroscopy (ILS) with sufficient sensitivity to permit the direct in situ monitoring of SiH2 in conditions appropriate for the CVD of silicon films.1

© 1987 Optical Society of America

PDF Article
More Like This
Analysis of the Chemical Vapor Deposition of silicon by Intracavity Laser Spectroscopy

J.J. O'Brien and G.H. Atkinson
WD2 Lasers in Material Diagnostics (LMD) 1987

Laser Spectroscopy of Chemical Vapor Deposition

William G. Breiland, Pauline Ho, and Michael E. Coltrin
WD1 Lasers in Material Diagnostics (LMD) 1987

Intracavity laser spectroscopy: analysis of extracavity feedback

W. E. TORRUELLAS, J. J. O’BRIEN, and G. H. ATKINSON
THGG23 International Quantum Electronics Conference (IQEC) 1987

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved