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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1987),
  • paper ThT4

HIGH-POWER SINGLE-QUANTUM-WELL AlGaAs:GaAs LASERS WITH CHEMICALLY ASSISTED ION BEAM ETCHED MIRROR FACETS

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Abstract

Single-quantum-wel1 AlGaAs:GaAs laser diodes which have one facet fabricated by chemical1y assisted ion beam etching are capable of l. 7W pulsed (470mW cw) output, with a pulsed differential quantum efficencies of 40% at 94mW (39% cw).

© 1987 Optical Society of America

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