Abstract
Single-quantum-wel1 AlGaAs:GaAs laser diodes which have one facet fabricated by chemical1y assisted ion beam etching are capable of l. 7W pulsed (470mW cw) output, with a pulsed differential quantum efficencies of 40% at 94mW (39% cw).
© 1987 Optical Society of America
PDF ArticleMore Like This
P. Tihanyi, D. K. Wagner, H. J. Vollmer, A. J. Roza, C. M. Harding, R. J. Davis, and E. D. Wolf
WA5 Semiconductor Lasers (ASLA) 1987
L. F. Lester, W. J. Schaff, S. D. Offsey, and L. F. Eastman
CTuA6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991
Yongkun Sin, Nathan Presser, Brendan Foran, Maribeth Mason, and Steven C. Moss
CThEE5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007