Molecular beam epitaxy of HgCdTe and HgTe-CdTe superlattices for infrared uses

J. F. SCHETZINA

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1988),
paper MI2

Molecular beam epitaxy of HgCdTe and HgTe-CdTe superlattices for infrared uses

J. F. SCHETZINA

Conference on Lasers and Electro-Optics 1988

Anaheim, California United States
25–29 April 1988
ISBN: 1-55752-033-X

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Infrared Detectors and Materials (MI)

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J. F. SCHETZINA, "Molecular beam epitaxy of HgCdTe and HgTe-CdTe superlattices for infrared uses," in Conference on Lasers and Electro-Optics, D. Pinnow and P. Moulton, eds., Vol. 7 of OSA Technical Digest (Optica Publishing Group, 1988), paper MI2.

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Abstract

Molecular beam epitaxy (MBE) has been successfully employed to prepare HgCdTe alloy films and HgTe-CdTe superlattices for use in IR applications. Details of the MBE systems at NCSU, designed specifically for growing Hg-based materials, are discussed. Double-crystal x-ray diffraction has been used to evaluate the structural perfection of the epilayers and to determine layer thicknesses of superlattices.

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