Abstract

Low-temperature epitaxial growth of the compound semiconductor is attractive for uses In optical devices and optoelectronic integrated circuits because of the maintenance of smooth heterojunction interfaces and reduction of thermal stress in epitaxial layers. Photostimulated chemical vapor deposition with an UV light source¹ or an IR laser² has been investigated as a low-temperature epitaxial growth method. However, high-quality epitaxial layers have not been obtained at temperatures below 600°C. Therefore, we developed new photostimulated MO chemical vapor deposition of GaAs using a continuous-wave CO₂ laser and a high-pressure Hg lamp.

© 1988 Optical Society of America