Single-step selective doping of Si into GaAs in submicron feature size using XeCl excimer laser

KOJI SUGIOKA; KOICHI TOYODA

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1988),
paper THM9

Single-step selective doping of Si into GaAs in submicron feature size using XeCl excimer laser

KOJI SUGIOKA and KOICHI TOYODA

Conference on Lasers and Electro-Optics 1988

Anaheim, California United States
25–29 April 1988
ISBN: 1-55752-033-X

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Poster Session: 3 (THM)

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K. SUGIOKA and K. TOYODA, "Single-step selective doping of Si into GaAs in submicron feature size using XeCl excimer laser," in Conference on Lasers and Electro-Optics, D. Pinnow and P. Moulton, eds., Vol. 7 of OSA Technical Digest (Optica Publishing Group, 1988), paper THM9.

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Abstract

Laser projection patterned techniques offer great flexibility in microelectronics uses. Thin-film deposition has been demonstrated as selective deposition of aluminum.¹ Laser chemical doping using gas phase dopant molecules has not involved spatial selectivity on microscale.²

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